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| Composite Transistors XP5501 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.250.1 0.425 0.20.05 For general amplification 2.10.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.00.1 s Features 0.65 1 2 3 6 5 4 0.90.1 q 2SD601A x 2 elements 0.70.1 0 to 0.1 0.20.1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 60 50 7 100 200 150 150 -55 to +150 Unit V V V mA mA mW 1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC-88 S-Mini Type Package (6-pin) Marking Symbol: 5L Internal Connection 1 Tr1 6 5 4 C C 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *1 (Ta=25C) Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE (small/large)*1 VCE(sat) fT Cob Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = -2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 160 0.5 0.99 0.1 150 3.5 0.3 V MHz pF min 60 50 7 0.1 100 460 typ max Unit V V V A A Ratio between 2 elements 0.12 -0.02 s Basic Part Number of Element 0.2 +0.05 1 Composite Transistors PT -- Ta 250 60 Ta=25C IB=160A XP5501 IC -- VCE 1200 VCE=10V Ta=25C 1000 IB -- VBE Total power dissipation PT (mW) Collector current IC (mA) 200 50 40 Base current IB (A) 140A 120A 100A 30 80A 20 60A 40A 10 20A 800 150 600 100 400 50 200 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC -- VBE 240 VCE=10V 200 200 240 VCE=10V Ta=25C IC -- I B 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25C Ta=75C Collector current IC (mA) 160 Collector current IC (mA) 160 120 Ta=75C 80 25C 120 -25C 80 40 40 -25C 0 0 0.4 0.8 1.2 1.6 2.0 0 0 200 400 600 800 1000 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base current IB (A) Collector current IC (mA) hFE -- IC 600 VCE=10V 300 fT -- I E 240 NV -- IC VCB=10V Ta=25C VCE=10V GV=80dB Function=FLAT 200 Ta=25C 160 Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 400 Ta=75C 25C 180 Noise voltage NV (mV) 240 300 -25C 120 Rg=100k 120 200 80 22k 4.7k 100 60 40 0 0.1 0.3 1 3 10 30 100 0 -0.1 -0.3 -1 -3 -10 -30 -100 0 10 20 30 50 100 200 300 500 1000 Collector current IC (mA) Emitter current IE (mA) Collector current IC (A) 2 |
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